silicon switching diode symbol max unit continuous reverse voltage v r 75 v recurrent peak forward current i r 200 ma peak forward surge current pulse width = 10 m s i fm(surge) 500 ma total power dissipation, one diode loaded t a = 25 c derate above 25 c mounted on a ceramic substrate (10 x 8 x 0.6 mm) p d 150 1.6 mw mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient one diode loaded mounted on a ceramic substrate (10 x 8 x 0.6 mm) r q ja 0.625 c/mw device marking l bas16tt 1 g= a6 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit forward voltage (i f = 1.0 ma) (i f = 10 ma) (i f = 50 ma) (i f = 150 ma) v f e e e e 715 866 1000 1250 mv reverse current (v r = 75 v) (v r = 75 v, t j = 150 c) (v r = 25 v, t j = 150 c) i r e e e 1.0 50 30 m a capacitance (v r = 0, f = 1.0 mhz) c d e 2.0 pf reverse recovery time (i f = i r = 10 ma, r l = 50 w ) (figure 1) t rr e 6.0 ns stored charge (i f = 10 ma to v r = 6.0 v, r l = 500 w ) (figure 2) qs e 45 pc forward recovery voltage (i f = 10 ma, t r = 20 ns) (figure 3) v fr e 1.75 v 3 cathode 1 anode lbas16tt1g rating maximum ratings (t a = 25 o c) feature leshan radio company, ltd. device marking shipping lbas16tt1g a6 3000/tape&reel lbas16tt3g a6 10000/tape&reel we declare that the material of product compliance with rohs requirements. sc-89 rev.o 1/4 s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. z s-lbas16tt1g s-lbas16tt1g s-lbas16tt3g z ordering information
l bas16tt1g, s-lbas16tt1g figure 1. reverse recovery time equivalent test circuit figure 2. recovery charge equivalent test circuit figure 3. forward recovery voltage equivalent test circuit v f 1 ns max 90% 10% t 100 ns t if t rr i rr 500 w dut 50 w duty cycle = 2% v f 90% 10% 20 ns max t 400 ns v c v cm t v cm qa c 500 w dut baw62 d1 243 pf 100 k w duty cycle = 2% v 120 ns t 2 ns max 10% 90% v v fr 1 k w 450 w 50 w dut duty cycle = 2% oscilloscope r 10 m c 7 pf leshan radio company, ltd. rev.o 2/4
100 0.2 0.4 v f , forward voltage (volts) 0.6 0.8 1.0 1.2 10 1.0 0.1 t a = 85 5 c 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 0.001 10 20 30 40 50 0.68 0 v r , reverse voltage (volts) 0.64 0.60 0.56 0.52 c d , diode capacitance (pf) 2468 i f , forward current (ma) figure 4. forward voltage figure 5. leakage current figure 6. capacitance t a = -40 5 c t a = 25 5 c t a = 150 5 c t a = 125 5 c t a = 85 5 c t a = 55 5 c t a = 25 5 c i r , reverse current ( m a) leshan radio company, ltd. rev.o 3/4 l bas16tt1g, s-lbas16tt1g
leshan radio company, ltd. notes: 1.dimensioning and tolerancing per ansi y14.5m, 1982. 2.controlling dimension: millimeters 3.maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4.463c-01 obsolete, new standard 463c-02. sc-89 rev.o 4/4 l bas16tt1g, s-lbas16tt1g
|
